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Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects

โœ Scribed by Park, Seoung-Hwan; Chuang, Shun-Lien


Book ID
111879004
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
438 KB
Volume
87
Category
Article
ISSN
0021-8979

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Analytical performance evaluation of AlG
โœ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cutโ€off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position