Comparison of the water effect on the resistance of different semiconducting metal oxides

✍ Scribed by F. Réti; M. Fleischer; J. Gerblinger; U. Lampe; E.B. Várhegyi; I.V. Perczel; H. Meixner; J. Giber

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 409 KB
• Volume: 26
• Category: Article
• ISSN: 0925-4005
• DOI: 10.1016/0925-4005(94)01567-2

✦ Synopsis

In this work the time and temperature dependence of the complex interaction between water and different oxide semiconductor surfaces was examined by resistance measurements in inert and in oxygen containing atmospheres. The experimental temperature varied between 823 and (1093 \mathrm{~K}). The water content of the atmospheric pressure nitrogen or (5 %) oxygen containing nitrogen carrier was 15 or 30 mbar.