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Comparison of the low-temperature ( ≤ 600 °C) polysilicon thin-film transistors (TFTs) with two kinds of gate dielectrics

✍ Scribed by L. Pichon; F. Raoult; O. Bonnaud

Book ID: 113300326
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 470 KB
Volume: 39
Category: Article
ISSN: 0254-0584
DOI: 10.1016/0254-0584(94)01441-i

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