Comparison of SnBr4 and di-n-butyl tin diacetate as laser-assisted chemical vapor deposition precursors for SnO2-based gas sensors
✍ Scribed by Jeanne M. Hossenlopp; F. J. Lamelas; Kenneth Middleton; Jeffrey A. Rzepiela; Jason D. Schmidt; Aleksandar Zivkovic
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 145 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0268-2605
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✦ Synopsis
Laser-assisted chemical vapor deposition (LCVD) was utilized to produce SnO 2 films from SnBr 4 plus air, O 2 or N 2 O. SnO 2 films were successfully generated using either 222 or 308 nm laser pulses but there was evidence for film contamination when using less than 60 mJ/ pulse laser energies at 222 nm. Films were characterized using ultraviolet absorption spectroscopy; the spectra of films with impurities resembled the spectrum of SnBr 4 . AFM images were obtained which indicated that this LCVD route produced small and fairly uniform SnO 2 grains which were 50-100 nm in size. Multiphoton ionization spectroscopy was used to verify that the dissociation of a film dopant precursor, copper(II) acetate, produced gasphase copper atoms under conditions similar to those used in film deposition experiments. The deposition of SnO 2 from SnBr 4 plus an oxidant was found to be more efficient than from di-nbutyl tin diacetate but films produced via this new LCVD route, including those doped with copper, were found to be much less sensitive in preliminary gas-sensing screening.