The feasibility of using a dual-gate FET as the frequency di¨ider in Ka band with a wide bandwidth has been demonstrated. If we appropriately bias and match a dual-gate FET, we obtain an operating frequency range as wide as 10 GHz.
β¦ LIBER β¦
Comparison of Single- and Dual-Gate FET Frequency Doublers
β Scribed by Gopinath, A.; Seeds, A.J.; Rankin, J.B.
- Book ID
- 114657971
- Publisher
- IEEE
- Year
- 1982
- Tongue
- English
- Weight
- 219 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Dual-gate FET millimeter-wave frequency
β
Chen Ru Shan; Zhang Qing Tai; Edward K. N. Yung
π
Article
π
1997
π
John Wiley and Sons
π
English
β 96 KB
High-Output, Single- and Dual-Diode, Mil
β
Archer, J.W.; Faber, M.T.
π
Article
π
1985
π
IEEE
π
English
β 663 KB
FET Frequency doubler with out-of-phase
β
Ning Yang; Christophe Caloz; Ke Wu
π
Article
π
2011
π
John Wiley and Sons
π
English
β 392 KB
## Abstract A field effect transistor (FET) frequency doubler, with 180Β° outβofβphase alternate output by switching the bias status of FET at pinchβoff (__V__~gg~ β __Vt__) or saturation (__V__~gg~ β 0) is proposed.With such bias conditions, the former conducts in the positive halfβcycle of the inp
A subharmonically injection-locked dual-
β
Quan Xue
π
Article
π
2000
π
John Wiley and Sons
π
English
β 102 KB
A 156 GHz single-stage GaAs dual-gate FE
β
Kanazawa, K.; Hagio, M.; Kazumura, M.; Kano, G.
π
Article
π
1988
π
IEEE
π
English
β 426 KB
[MTT005 MTT-S International Microwave Sy
β
Stancliff, R.
π
Article
π
1981
π
MTT005
β 171 KB