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Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

✍ Scribed by Lozano, M.; Pellegrini, G.; Fleta, C.; Loderer, C.; Rafi, J.M.; Ullan, M.; Campabadal, F.; Martinez, C.; Key, M.; Casse, G.; Allport, P.

Book ID: 120519437
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 377 KB
Volume: 52
Category: Article
ISSN: 0018-9499
DOI: 10.1109/TNS.2005.855809

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