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Comparison of Quantum Wells based on InGaAs(P)/InP and InGa(Al)As/InAlAs Material Systems in View of Carrier Escape Times for High-Saturation-Optical-Power Electroabsorption Modulators

✍ Scribed by Kim, Kang-Baek; Shin, Dong-Soo


Book ID
115400348
Publisher
Korean Journal of Optics and Photonics
Year
2007
Tongue
English
Weight
308 KB
Volume
11
Category
Article
ISSN
1226-4776

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