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Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs

✍ Scribed by Kiichi Tachi; Sylvain Barraud; Kuniyuki Kakushima; Hiroshi Iwai; Sorin Cristoloveanu; Thomas Ernst


Book ID
108210928
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
514 KB
Volume
51
Category
Article
ISSN
0026-2714

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