Comparison of shallow depth profiles of
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Klockenkämper, R.; von Bohlen, A.; Becker, H. W.; Palmetshofer, L.
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Article
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1999
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John Wiley and Sons
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English
⚖ 94 KB
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Thin and shallow layers of some 50-150 nm were produced by ion implantation of Co ions in Si wafers and afterwards characterized by concentration-depth profiling. Two methods were applied for that purpose: a novel method combining a stepwise wet-chemical etching of an implanted wafer with total refl