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Comparison of hydrophobic modifying layers on SiO2 studied with a force-controlled atomic force microscope

✍ Scribed by S.P. Jarvis; J.B. Pethica

Book ID
107864731
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
657 KB
Volume
273
Category
Article
ISSN
0040-6090

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In this work, a conductive atomic force microscope (C-AFM) is used to study the reliability (degradation and breakdown, BD) of SiO 2 and high-k dielectrics. The effect of a current limit on the post-BD SiO 2 electrical properties at the nanoscale is discussed. In particular, the impact of a current