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Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

✍ Scribed by Jernigan, Glenn G.; VanMil, Brenda L.; Tedesco, Joseph L.; Tischler, Joseph G.; Glaser, Evan R.; Davidson, Anthony; Campbell, Paul M.; Gaskill, D. Kurt

Book ID: 126899969
Publisher: American Chemical Society
Year: 2009
Tongue: English
Weight: 571 KB
Volume: 9
Category: Article
ISSN: 1530-6984
DOI: 10.1021/nl900803z

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