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Comparison of entrance and exit dose measurements using ionization chambers and silicon diodes

✍ Scribed by Heukelom, S; Lanson, J H; Mijnheer, B J


Book ID
125504249
Publisher
Institute of Physics
Year
1991
Tongue
English
Weight
611 KB
Volume
36
Category
Article
ISSN
0031-9155

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✍ Gopiraj ANNAMALAI; Ramasubramanian VELAYUDHAM πŸ“‚ Article πŸ“… 2009 πŸ› Wielkopolskie Centrum Onkologii 🌐 Polish βš– 414 KB

## BACKGROUND: In radiation therapy, the peripheral dose (PD) -the dose outside the geometric boundaries of the radiation fi eld -is of clinical importance. A metal oxide semiconductor fi eld effect transistor (MOSFET) detector is used to estimate the peripheral dose.