Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides

✍ Scribed by Fleetwood, D.M.; Beutler, D.E.; Lorence, L.J., Jr; Brown, D.B.; Draper, B.L.; Riewe, L.C.; Rosenstock, H.B.; Knott, D.P.

• Book ID: 114554590
• Publisher: IEEE
• Year: 1988
• Tongue: English
• Weight: 745 KB
• Volume: 35
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/23.25450