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Comparison of charge–retention times in n- and p-type 4H–SiC MOS capacitors as non-volatile memory elements

✍ Scribed by K.Y Cheong; S Dimitrijev; J Han


Book ID
108165825
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
442 KB
Volume
268
Category
Article
ISSN
0022-0248

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