The effects of adjacent dislocations on
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A.D Andreev; J.R Downes; E.P O'Reilly
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Article
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2002
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Elsevier Science
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English
⚖ 123 KB
We present a theory of the electronic energy levels and wave functions within GaN quantum dots (QDs), including the e ect of the strain ÿeld of a nearby dislocation and a full treatment of the built-in electrostatic potential. The QD carrier spectra and wave functions are calculated using a plane-wa