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Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

✍ Scribed by Marso, M.; Fox, A.; Heidelberger, G.; Kordos, P.; Luth, H.

Book ID: 121264081
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 154 KB
Volume: 27
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2006.886705

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