Comparison among the formation processes of extended defects in Si under irradiation with low-energy H+, He+ ions and high-energy electrons

✍ Scribed by K. Arakawa; K. Saitoh; H. Mori; K. Ono

• Book ID: 114167015
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 171 KB
• Volume: 206
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(03)00678-5