✍ Scribed by A. Schmidt; S. Babin; K. Böhmer; H.W.P. Koops
No coin nor oath required. For personal study only.
Fabrication techniques in microelectronics as well as in micro mechanics, micro optics and micro fluidics favour the application of a dry resist process due to environmental protection and reproducibility in the processing. The applicability of the dry, negative tone resist using octavinylsilsesquioxane as a monomer unit is investigated by three different lithographies. Deep UV-lithography with excimer laser radiation, electron-beam, and X-ray lithography with synchrotron radiation is employed to measure the characteristics of this resist. For deep UVlithography, the resist shows ablation which means a positive action as well as polymerization for negative action depending on the wavelength and the fluence range applied. Under electron beam and X-ray exposure the material acts as a negative tone resist with high sensitivity and spatial resolution. The characteristic curves of the resist using the three lithographies are presented.
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