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Comparative study of photoluminescences for the Ga-/N-faces of a free-standing GaN bulk fabricated by using hydride vapor-phase epitaxy and self-separation technique

✍ Scribed by D. C. Oh, H. J. Lee, H. J. Ko, T. Yao


Book ID
119937082
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
232 KB
Volume
61
Category
Article
ISSN
0374-4884

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