Comparative Study of Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs

✍ Scribed by Chengqing Wei; Yong-Zhong Xiong; Xing Zhou; Singh, N.; Xiao-Jun Yuan; Guo Qiang Lo; Lap Chan; Dim-Lee Kwong

• Book ID: 114620137
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 600 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2061853