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Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

✍ Scribed by Jung-Hui Tsai; Sheng-Shiun Ye; Der-Feng Guo; Wen-Shiung Lour


Book ID
114992407
Publisher
Springer
Year
2012
Tongue
English
Weight
241 KB
Volume
46
Category
Article
ISSN
1063-7826

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