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Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT

✍ Scribed by Jungemann, C.; Neinhus, B.; Meinerzhagen, B.


Book ID
114538856
Publisher
IEEE
Year
2001
Tongue
English
Weight
84 KB
Volume
48
Category
Article
ISSN
0018-9383

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