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Comparative effects of polymide and PECVD silicon nitride as passivating layers on GaAs power MESFET characteristics

✍ Scribed by G.P. Donzelli; B. Gabbrielli


Book ID
107925601
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
263 KB
Volume
30
Category
Article
ISSN
0169-4332

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