Compact V-band two-port switch using spiral inductors
✍ Scribed by Laurent Desclos; Kenichi Maruhashi; Mohammad Madihian
- Book ID
- 101269377
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 190 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Figure 4
Power density versus frequency for GaInP, Si, and GaAs Read diode structure at 500 K for frequencies below 100 GHz frequency for GaInP p q -n single-drift flat-profile structures. Thus, it is feasible to design a high᎐low or a low᎐high᎐low Read-type structure to further optimize the efficiency by reducing the voltage drop at the avalanche region. The output power and efficiency can be further improved by using a double-drift-type design.
In conclusion, millimeter-wave GaInP IMPATT devices were analyzed with temperature-dependent ionization rates and saturation velocity. GaInP material is attractive to GaAs monolithic integrated circuit technology because of the lattice-match property and high etching selectivity between GaInP and GaAs. Our simulation confirms the power density advantage of millimeter-wave GaInP IMPATT oscillators.