𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Compact modeling of the effects of parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric nanoscale SOI MOSFETs

✍ Scribed by Kumar, M.J.; Gupta, S.K.; Venkataraman, V.


Book ID
114618171
Publisher
IEEE
Year
2006
Tongue
English
Weight
299 KB
Volume
53
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.