Communication: The insertion of silylene in CH bonds; rate constant limits and the energy barrier
✍ Scribed by Rosa Becerra; Robin Walsh
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 113 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0538-8066
No coin nor oath required. For personal study only.
✦ Synopsis
The technique of laser flash photolysis has been used to set limits on the rate constants for the bimolecular reactions of SiH 2 with methane (CH 4 ) and tetramethylsilane (SiMe 4 ) at both ambient and elevated temperatures (ca 600 K). These limits show that the energy barriers to insertion reactions of SiH 2 in the C9 H bonds of CH 4 are at least 45(Ϯ6) kJ and in the C9 H and/or Si 9 C bonds of SiMe 4 are at least 23(Ϯ6) kJ The best Ϫ1 Ϫ1 mol mol . thermochemical estimate of the activation energy for is 59(Ϯ12) kJ Reasons Ϫ1 SiH ϩ CH mol . 2 4 for the greatly diminished reactivity of SiH 2 with C9H as compared with Si 9 H bonds are discussed.