Comments, with reply, on "Shallow-junction diode formation by implantation of arsenic and boron through TiSi/sub 2/ film and rapid thermal annealing" by L. Rubin et al

✍ Scribed by Liu, R.; Lu, C.Y.

• Book ID: 114537983
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 303 KB
• Volume: 38
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.81655