Comments on "Noise in IMPATT Diode Amplifiers and Oscillators" [Letters]
β Scribed by Schiek, B.; Schunemann, K.
- Book ID
- 117927121
- Publisher
- IEEE
- Year
- 1972
- Tongue
- English
- Weight
- 308 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract RF properties and avalanche noise generation in optoβsensitive GaAs, InP, GaInAs, and GaInAsP doubleβdrift IMPATT diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical
Janicki and Szemplinska-Stupnicka [1], have presented approximate periodic solutions and their instabilities for low order subharmonic resonances of the twin-well potential Duffing system. They empolyed a near-linear perturbation method in their analysis. Using an improved harmonic balance technique