Comment on “Effects of the localized state inside the barrier on resonant tunneling in double-barrier quantum wells”
✍ Scribed by Xu, H. Z.; Shi, Z.
- Book ID
- 121347250
- Publisher
- The American Physical Society
- Year
- 2004
- Tongue
- English
- Weight
- 46 KB
- Volume
- 69
- Category
- Article
- ISSN
- 1098-0121
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A theoretical analysis of the effect of scattering centers on tunneling current in amorphous (a-SiC:H/a-Si:H/a-SiC:H) double barrier heterostructures (DBH) is presented in terms of the transfer matrix and Airy function approaches. We consider one localized center in the well of the DBH and take into
We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high q