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Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding

โœ Scribed by X. Yu; O. Vyvenko; M. Kittler; W. Seifert; T. Mtchedlidze; T. Arguirov; M. Reiche

Book ID
111443764
Publisher
Springer
Year
2007
Tongue
English
Weight
201 KB
Volume
41
Category
Article
ISSN
1063-7826

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๐Ÿ“œ SIMILAR VOLUMES

Properties of dislocation networks forme
Properties of dislocation networks formed by Si wafer direct bonding
โœ X. Yu; T. Arguirov; M. Kittler; W. Seifert; M. Ratzke; M. Reiche ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 361 KB

Reproducible formation of well-controlled dislocation structures is a prerequisite to use dislocations as an active part of devices. Regular dislocation networks have been formed at the interface by Si wafer direct bonding. The barriers of interface were generally smaller than 100 meV. The temperatu