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COLORING BY VACUUM REDUCTION IN Nd- AND Pr-DOPED CaWO4

✍ Scribed by Cronemeyer, D. C.; Beaubien, M. W.


Book ID
120075906
Publisher
American Institute of Physics
Year
1964
Tongue
English
Weight
434 KB
Volume
4
Category
Article
ISSN
0003-6951

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From the temperature dependence of the hole concentration in lightly Al-doped 4H-SiC epilayers, a shallow acceptor with E V þ 0:2 eV, which is an Al atom ðAl Si Þ at a Si sublattice site, and an unknown deep defect with E V þ 0:35 eV are found, where E V is the valence band maximum. In unirradiated