Collisional Broadening of Semiconductor Microcavity Polaritons

✍ Scribed by Dunbar, L.A. ;Lynch, M. ;Bradley, A.L. ;Donegan, J.F. ;Hegarty, J. ;Stanley, R.P. ;Oesterle, U. ;Houdr�, R. ;Ilegems, M.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 95 KB
• Volume: 190
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200204)190:2<435::aid-pssa435>3.0.co;2-o

✦ Synopsis

We measure the effect of intensity on the homogeneous linewidth of two high finesse semiconductor microcavities in the strong coupling regime using degenerate four-wave mixing. We find that the collisional broadening due to polariton-polariton scattering shows a threshold behaviour with intensity. At low intensities, a strong suppression is seen due to the small density of states available. Above threshold, the number of accessible states dramatically increases, giving a large increase in the collisional broadening. We also investigate the effect of modifying the dispersion curve, by detuning, on the threshold behaviour.

L. A.