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CO2gas sensor usingβ-Al2O3and metal carbonate

✍ Scribed by Tadashi Ogata; Satoru Fujitsu; Masaru Miyayama; Kunihito Koumoto; Hiroaki Yanagida

Publisher
Springer
Year
1986
Tongue
English
Weight
141 KB
Volume
5
Category
Article
ISSN
0261-8028

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Growth of β-Ga2O3on Al2O3and GaAs using
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✍ Gottschalch, Volker ;Mergenthaler, Kilian ;Wagner, Gerald ;Bauer, Jens ;Paetzelt 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 950 KB

## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions