✦ LIBER ✦
CMOS Device and Circuit Degradations Subject to HfO2 Gate Breakdown and Transient Charge-Trapping Effect
✍ Scribed by Yu, C.; Yuan, J. S.
- Book ID
- 114618559
- Publisher
- IEEE
- Year
- 2007
- Tongue
- English
- Weight
- 817 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0018-9383
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