CMOS active pixel sensors for ionising radiation

✍ Scribed by D.A. Evans; P.P. Allport; G. Casse; A.R. Faruqi; B. Gallop; R. Henderson; M. Prydderch; R. Turchetta; M. Tyndel; J. Velthuis; G. Villani; N. Waltham

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 269 KB
• Volume: 546
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2005.03.108

✦ Synopsis

Monolithic Active Pixel Sensors (MAPS) take advantage of recent developments in deep sub-micron VLSI technology. CMOS sensors now enjoy widespread commercial applications as inexpensive visible light-imaging devices. These are also being utilised and developed for an increasing number of scientific fields due to advantages which include: low power consumption, radiation hardness, small pixel size and on-chip or even in-pixel processing capabilities.

We have designed, characterised and evaluated a number of prototype CMOS MAPS devices as position-sensitive detectors for ionising radiation. This development was primarily driven by the requirements of the Linear Collider vertex detector but a broader spectrum of applications, including several outside particle physics, has been explored and some of these are also briefly presented here.