Class F against tuned load configuration in Doherty power amplifiers

✍ Scribed by P. Colantonio; F. Giannini; R. Giofrè; L. Piazzon

• Book ID: 102520301
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 103 KB
• Volume: 52
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.24918

✦ Synopsis

Abstract

The experimental results and comparison of two Doherty Power Amplifiers (DPAs) with the Main device designed respectively in a Tuned Load and a Class F configuration are presented. Both DPAs are designed by using GaN HEMT (1 mm of gate periphery) as active device to operate at 2.14 GHz, assuring an almost constant efficiency over the usual Output Back Off range of 6 dB. The experimental results demonstrate the benefit of the Class F solution in a DPA architecture. ©2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 450–452, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24918