Circuit Simulation of Threshold-Voltage Degradation in a-Si:H TFTs Fabricated at 175 °C

✍ Scribed by Shringarpure, R.; Venugopal, S.; Zi Li; Clark, L.T.; Allee, D.R.; Bawolek, E.; Toy, D.

• Book ID: 114618801
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 267 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.899667