Circuit analysis, logic simulation and d
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Article
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1985
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Elsevier Science
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English
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The use of high om.~gnetic fields for the characterization of impurities in epitaxiai GaAs M. N AFSAR Microelectron. J. 13 (1), 15 (1982) The only reliable method for indentification of donor contaminants such as Si, S, Si, Sn and Ge in ultra-high purity epitaxial GaAs is the observation of the 1 s