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Chemisorption state of atomic oxygen on TiC(100) surface: angle-resolved photoemission study

✍ Scribed by K. Edamoto; T. Anazawa; E. Miyazaki; H. Kato; S. Otani

Publisher: Elsevier Science
Year: 1993
Weight: 66 KB
Volume: 287-288
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(93)90514-j

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conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than • i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units