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ChemInform Abstract: Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides Ln3SbO3 and Ln8Sb3-δO8 with Ln: La, Sm, Gd, and Ho.

✍ Scribed by Peng Wang; Scott Forbes; Taras Kolodiazhnyi; Kosuke Kosuda; Yurij Mozharivskyj

Publisher: John Wiley and Sons
Year: 2010
Weight: 19 KB
Volume: 41
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.201041018

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