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ChemInform Abstract: Reactive Ion Etching of 6H-SiC in SF6/O2 and CF4/O2 with N2 Additive for Device Fabrication.

✍ Scribed by R. WOLF; R. HELBIG

Book ID: 112036093
Publisher: John Wiley and Sons
Year: 2010
Weight: 27 KB
Volume: 27
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.199633263

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