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ChemInform Abstract: In situ Monitoring of Electrochemical Processes at the (100) p-Si/ Aqueous NH4F Electrolyte Interface by Photoluminescence.

✍ Scribed by J. RAPPICH; V. YU. TIMOSHENKO; TH. DITTRICH

Publisher: John Wiley and Sons
Year: 2010
Weight: 28 KB
Volume: 28
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.199722017

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✦ Synopsis

In situ Monitoring of Electrochemical Processes at the (100) p-Si/ Aqueous NH4F Electrolyte Interface by Photoluminescence.

-The influence of the etch rate of oxidized Si atoms in F-solutions on the concentration of nonradiative recombination centers at the Si surface during electropolishing and hydrogenation is studied by in situ photoluminescence (PL) measurements with short N2 laser pulses. The etch rate of the anodic oxide, which is characterized by the reciprocal oscillation period, depends on the composition of the F-solution. The PL intensity increases with decreasing etch rate and anticorrelates with the oxidation rate. The passivation of the Si surface by hydrogenation exhibits only little dependence on the etch rate. -(RAPPICH,

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