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ChemInform Abstract: Characterization of Compensation and Trapping in CdTe and CdZnTe: Recent Advances

✍ Scribed by v. Babentsov; J. Franc; P. Hoeschl; M. Fiederle; K. W. Benz; N. V. Sochinskii; E. Dieguez; R. B. James


Publisher
John Wiley and Sons
Year
2009
Weight
15 KB
Volume
40
Category
Article
ISSN
0931-7597

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Characterization of compensation and tra
✍ V. Babentsov; J. Franc; P. HΓΆschl; M. Fiederle; K. W. Benz; N. V. Sochinskii; E. πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 201 KB

## Abstract Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, V~Cd~ and Te~Cd~ are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot. We demonstrate that (∼2÷3 kT) vari