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Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces : effects on valence-band discontinuity measurements: R S List et al, J Vac Sci Technol, A6, 1988, 1543–1547


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
154 KB
Volume
39
Category
Article
ISSN
0042-207X

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