✦ LIBER ✦
Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS devices: an effect of self-sealing barrier configuration interposed between Ta and SiO2
✍ Scribed by Ushiki, T.; Kawai, K.; Ohshima, I.; Ohmi, T.
- Book ID
- 114538332
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 183 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9383
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