Transport properties of semiconducting r
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L. Ivanenko; V.L. Shaposhnikov; A.B. Filonov; D.B. Migas; G. Behr; J. Schumann;
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Article
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2002
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Elsevier Science
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English
โ 365 KB
Transport properties of semiconducting rhenium silicide ReSi were studied both experimentally and 1.75 theoretically. For this high quality ReSi single crystals were grown by the zone melting technique with 1.75 radiation heating and their resistivity and Hall coefficient were investigated. The room