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Chemical preparation of ultra-fine aluminium nitride by electric-arc plasma

โœ Scribed by G. P. Vissokov; L. B. Brakalov


Publisher
Springer
Year
1983
Tongue
English
Weight
483 KB
Volume
18
Category
Article
ISSN
0022-2461

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Chemical bonding and composition of sili
โœ M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 560 KB

Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process