Copper chemical mechanical polishing usi
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V.H. Nguyen; A.J. Hof; H. van Kranenburg; P.H. Woerlee; F. Weimar
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Article
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2001
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Elsevier Science
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English
โ 756 KB
A study of the chemical mechanical polishing (CMP) of thin copper films using fixed-abrasive pads is presented. The composition of the polishing solution is optimized by investigating the impact of both the oxidizer concentration and the pH of the solution on the polishing characteristics of copper.