Chemical etching of (100) GaAs in the (NH4)2Cr2O7-H2SO4-N H4Cl-H2O system
✍ Scribed by Irena Barycka; Irena Zubel
- Publisher
- Springer
- Year
- 1986
- Tongue
- English
- Weight
- 489 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0022-2461
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📜 SIMILAR VOLUMES
## EXPERIMENTAL The IR and Raman spectra of a single crystal The crystals were prepared by the slow evaporation of NH 4 Sm(SO 4 ) 2 ؒ 4H 2 O and that of two polycrystalline compounds NH 4 Ln(SO 4 ) 2 ؒ 2H 2 O [Ln ؍ Yb, Tm] have been recorded and an aqueous solution containing lanthanide sulfate
Single-crystal X-ray study T = 100 K Mean '(S±O) = 0.001 A Ê Disorder in solvent or counterion R factor = 0.019 wR factor = 0.051 Data-to-parameter ratio = 12.3 For details of how these key indicators were automatically derived from the article, see http://journals.iucr.org/e.
KCl + KBr + H20 und NH,C1 i NH,Br + H,O bei 25O von R. F l a t t und G. Burkhardt. (30. IX. 44.) I n der vorstehenden Mitteilung l) ist darauf hingewiesen worden, tlass zur Gewinnung von Mischkrystallen aus Losungen besondere Massnahmen getroffen werden mussen, wenn man Mischkrystalle erhalten will,