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Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

✍ Scribed by Frédéric Lanois; Dominique Planson; Marie-Laure Locatelli; Patrick Lassagne; Claude Jaussaud; Jean-Pierre Chante

Book ID
107457838
Publisher
Springer US
Year
1999
Tongue
English
Weight
289 KB
Volume
28
Category
Article
ISSN
0361-5235

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## Abstract Microcrystalline silicon films were deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma enhanced chemical vapor deposition (PECVD) system using pure silane, under varying substrate bias conditions. Microstructural characterization of the films shows a lower voi